static electrical characteristics maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. n - channel enhancement mode high voltage power mosfets power mos iv g d s 050-5898 rev - 8-2001 parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 and inductive current clamped gate-source voltage total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. APL501P 500 43 172 30 520 4.16 -55 to 150 300 characteristic / test conditions / part number drain-source breakdown voltage (v gs = 0v, i d = 250 a) on state drain current 2 (v ds > i d (on) x r ds (on) max, v gs = 8v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d [cont.]) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) min typ max 500 43 0.12 25 250 100 24 unit volts amps volts watts w/c c unit volts amps ohms a na volts symbol v dss i d i dm , l lm v gs p d t j ,t stg t l symbol bv dss i d (on) r ds (on) i dss i gss v gs (th) usa 405 s.w. columbia street bend, oregon 97702 -1035 phone: (541) 382-8028 fax: (541) 388-0364 europe chemin de magret f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 apt website - http://www.advancedpower.com thermal characteristics symbol r q jc r q cs characteristic junction to case case to sink (use high efficiency thermal joint compound and planer heat sink surface.) min typ max 0.24 0.06 unit c/w APL501P 500v 43.0a 0.12 w hermetic package p-pack
dynamic characteristics APL501P 1 repetitive rating: pulse width limited by maximum junction temperature. see transient thermal impedance curve. (fig.1) 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.3 0.1 0.05 0.01 0.005 0.001 z q jc , thermal impedance (c/w) note: duty factor d = t 1 / t 2 peak t j = p dm x z q jc + t c t 1 t 2 p dm single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 safe operating area characteristics test conditions / part number v ds = 400 v, i ds = 0.813a, t = 20 sec., t c = 60c watts 050-5898 rev - 8-2001 symbol c iss c oss c rss t d (on) t r t d (off) t f min typ max 6040 7300 1220 1710 510 770 13 26 20 40 54 81 11 20 unit pf ns symbol soa1 min typ max 325 unit characteristic safe operating area test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 15v v dd = 0.5 v dss i d = i d [cont.] @ 25c r g = 0.6 w characteristic input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time i d , drain current (amperes) i d , drain current (amperes) 80 60 40 20 0 80 60 40 20 0 020406080100 0 4 8 12 16 v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics 8 v 6 v 7 v v gs =9v, 10v, 12v, 14 & 16v 5 v 8 v 6 v 7 v 5 v 9 v v gs =10, 12, 14 & 16v
i d , drain current (amperes) r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) c, capacitance (pf) v gs (th), threshold voltage bv dss (on), drain-to-source breakdown r ds (on), drain-to-source on resistance (normalized) voltage (normalized) v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle t j = +25c t j = -55c t j = +125c t j = +125c t j = +25c t j = -55c v gs =10v v gs =20v normalized to v gs = 10v @ 0.5 i d [cont.] i d = 0.5 i d [cont.] v gs = 10v c rss c oss c iss 02468 020406080 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 1 5 10 50 100 500 .01 .1 1 10 50 1.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.2 1.1 1.0 0.9 0.8 0.7 0.6 30,000 10,000 5,000 1,000 500 100 40 30 20 10 0 50 40 30 20 10 0 2.5 2.0 1.5 1.0 0.5 0.0 175 100 50 10 5 1 .5 .1 APL501P operation here limited by r ds (on) t c =+25c t j =+150c single pulse 100s 1ms 10ms 100ms dc 050-5898 rev - 8-2001
apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 APL501P 050-5898 rev - 8-2001 p-pack package outline 29.34 (1.155) 29.08 (1.145) 35.81 (1.41) 35.31 (1.39) 51.05 (2.01) 50.55 (1.99) 3.43 (.135) 2.92 (.115) (4-places) 11.63 (.458) 11.13 (.438) 12.45 (.490) 11.94 (.470) 35.18 (1.385) 34.67 (1.365) 41.53 (1.635) 41.02 (1.615) 3.43 (.135) 2.92 (.115) (4-places) 5.33 (.210) 4.83 (.190) 1.40 (.055) 1.02 (.040) 9.27 (.365) 8.64 (.340) .635 (.025) .381 (.015) 4.39 (.173) 4.14 (.163) (4 places) dimensions in millimeters and (inches) 28.70 (1.130) 28.45 (1.120) 4.06 (.160) 3.81 (.150) (5 places) 10.92 (.430) 10.67 (.420) drain gate source source sense
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